پیوندهای مفید
آمار
| تعداد نشریات | 31 |
| تعداد شماره‌ها | 777 |
| تعداد مقالات | 7,394 |
| تعداد مشاهده مقاله | 15,902,004 |
| تعداد دریافت فایل اصل مقاله | 7,447,960 |
Novel CNTFET with negative/positive slope impurity distribution to manage the nano-dimension effects | ||
| Computational Sciences and Engineering | ||
| مقاله 12، دوره 3، شماره 2، آذر 2023، صفحه 287-295 اصل مقاله (1.2 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22124/cse.2024.28043.1083 | ||
| نویسندگان | ||
| Mahya Salehi1؛ Ali Naderi* 2 | ||
| 1Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran. | ||
| 2Electrical Engineering Department, Engineering Faculty, Imam Khomeini International University | ||
| چکیده | ||
| Where a transistor is scaled to the nano dimension, it faces the problem of short-channel effects (SCEs), which reduce the gate control over the channel. The operation of carbon nanotube field effect transistors (CNTFETs) is completely sensitive to SCEs. Here, we propose a specific doping profile to manage the SCEs in CNTFETs. It includes graded doping with negative or positive slope for different regions of device. This profile manages the band to band tunneling and boosts the current ratio, subthreshold swing, and voltage gain. Tus, the proposed device is a transistor with improved short channel characteristics. Numerical simulation is used to obtain the results from Poisson and Schrodinger equations. | ||
| کلیدواژه‌ها | ||
| CNTFETs؛ PDP؛ Short Channel Effects؛ Subthreshold swing | ||
| مراجع | ||
|
[1] Haron, N. Z., & Hamdioui, S. (2008, December). Why is CMOS scaling coming to an END?. In 2008 3rd international design and test workshop (pp. 98-103). IEEE. [2] Kumari, A., Rani, S., & Singh, B. (2019). Parameterized comparison of nanotransistors based on CNT and GNR materials: effect of variation in gate oxide thickness and dielectric constant. Journal of Electronic Materials, 48, 3078-3085. [3] Gangavarapu, P. Y., Lokesh, P. C., Bhat, K. N., & Naik, A. K. (2017). Graphene electrodes as barrier-free contacts for carbon nanotube field-effect transistors. IEEE Transactions on Electron Devices, 64(10), 4335-4339. [4] Singh, A., Khosla, M., & Raj, B. (2015, October). Comparative analysis of carbon nanotube field effect transistors. In 2015 IEEE 4th Global Conference on Consumer Electronics (GCCE) (pp. 552-555). IEEE. [5] Tamersit, K. (2019). Performance assessment of a new radiation dosimeter based on carbon nanotube field-effect transistor: A quantum simulation study. IEEE Sensors Journal, 19(9), 3314-3321. [6] Mahdi, M., Hossain, M. A., & Saha, J. K. (2018, December). Performance Analysis of an Empirical Model of Carbon Nanotube Field Effect Transistor. In 2018 International Conference on Innovation in Engineering and Technology (ICIET) (pp. 1-6). IEEE. [7] Salah, A., Ossaimee, M., & Shaker, A. (2020). Impact of high-doped pockets on the performance of tunneling CNTFET. Superlattices and Microstructures, 145, 106622. [8] Tamersit, K. (2019). Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode. Superlattices and Microstructures, 128, 252-259. [9] Kimbrough, J., Chance, S., Whitaker, B., Duncan, Z., Davis, K., Henderson, A., ... & Camino, F. (2018, August). Deposition and alignment of carbon nanotubes with dielectrophoresis for fabrication of carbon nanotube field-effect transistors. In 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) (pp. 308-311). IEEE. [10] Mehrad, M., & Zareiee, M. (2022). A Reliable LDMOS Transistor Based on GaN and Si3N4 Windows in Buried Oxide. Computational Sciences and Engineering, 2(2), 291-297. [11] Anvarifard, M. K. (2022). Novel Drain Recessed Oxide SOI-MOSFET For Reduction of Short-Channel-Effects. Computational Sciences and Engineering, 2(2), 211-216. [12] Hartmann, M., Hermann, S., Marsh, P. F., Rutherglen, C., Wang, D., Ding, L., ... & Schröter, M. (2021). CNTFET technology for RF applications: Review and future perspective. IEEE Journal of Microwaves, 1(1), 275-287. [13] Gelao, G., Marani, R., & Perri, A. G. (2021). Analysis of Limits of CNTFET Devices through the Design of a Differential Amplifier. ECS Journal of Solid State Science and Technology, 10(6), 061009. [14] Marani, R., & Perri, A. G. (2023). critical analysis of CNTFET-based electronic circuits design. ECS Journal of Solid State Science and Technology, 12(5), 051005. [15] Paul, A., & Pradhan, B. (2024). Design of Ternary and Quaternary Asynchronous Up/Down Counter using CNTFET. AEU-International Journal of Electronics and Communications, 179, 155323. [16] Ghodrati, M., Mir, A., & Naderi, A. (2021). Proposal of a doping-less tunneling carbon nanotube field-effect transistor. Materials Science and Engineering: B, 265, 115016. [17] Ghodrati, M., Mir, A., & Naderi, A. (2020). New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern. AEU-International Journal of Electronics and Communications, 117, 153102. [18] Naderi, A., Ghodrati, M., & Baniardalani, S. (2020). The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor. Journal of Computational Electronics, 19, 283-290. [19] Naderi, A., & Tahne, B. A. (2016). T-CNTFET with gate-drain overlap and two different gate metals: a novel structure with increased saturation current. ECS Journal of Solid State Science and Technology, 5(8), M3032. | ||
|
آمار تعداد مشاهده مقاله: 127 تعداد دریافت فایل اصل مقاله: 10 |
||