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A comparative Study on Ridge Waveguide Laser Diode with Single GaAs Quantum Well | ||
Computational Sciences and Engineering | ||
مقاله 4، دوره 3، شماره 2، آذر 2023، صفحه 213-218 اصل مقاله (359.23 K) | ||
نوع مقاله: Original Article | ||
شناسه دیجیتال (DOI): 10.22124/cse.2024.27391.1074 | ||
نویسنده | ||
Zahra Danesh Danesh Kaftroudi* | ||
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar-Vajargah, Iran | ||
چکیده | ||
A typical ridge waveguide laser diode with single GaAs quantum well is theoretically designed and characterized using simulation software PICS3D. The simulator self-consistently combines 3D simulation of carrier transport, self-heating, and optical wave-guiding. Simulation results show that proposed laser structure operates with single mode state at about 0.834 micron with proper threshold current, output power and active region temperature. | ||
کلیدواژهها | ||
Simulation؛ Ridge؛ PICS3D؛ Laser Diode؛ Single GaAs Quantum Well؛ Waveguide | ||
مراجع | ||
[1] Ujager, F. S., Zaidi, S. M. H., & Younis, U. (2010). A review of semiconductor lasers for optical communications. In 7th International Symposium on High-capacity Optical Networks and Enabling Technologies, 107-111. [2] Chen, N., Darja, J., Narata, S., Ikeda, K., Nishide, K., & Nakano, Y. (2007). Ridge semiconductor laser with laterally undercut etched current confinement structure. IEICE transactions on electronics, 90(5), 1105-1110. [3] Oh, S. H., Kim, K. S., Kwon, O. K., & Oh, K. R. (2008). InGaAsP/InP Buried‐Ridge Waveguide Laser with Improved Lateral Single‐Mode Property. ETRI journal, 30(3), 480-482. [4] Piprek, J. (2003). Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation, Academic Press San Diego. [5] Available online at www.crosslight.com. [6] Volcheck, V. S., Stempitsky, V. R. (2017). Suppression of the self-heating effect in GaN-HEMT by few layer graphene heat spreading elements. Journal of Physics: Conf. Series, 917(8), 082015. | ||
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