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Novel Drain Recessed Oxide SOI-MOSFET For Reduction of Short-Channel-Effects | ||
| Computational Sciences and Engineering | ||
| دوره 2، شماره 2، آذر 2022، صفحه 211-216 اصل مقاله (267.15 K) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22124/cse.2023.23783.1045 | ||
| نویسنده | ||
| Mohammad Kazem Anvarifard* | ||
| Department of Engineering Sciences, Faculty of Technology and Engineering, East of Guilan, University of Guilan, Rudsar-Vajargah, Iran. | ||
| چکیده | ||
| Since the device performance is degraded with the elapsed time, it is essential to develop the novel device for enhancing the reliability. Hence, a modification inside the drain region of the SOI-MOSFET structure has been performed. A region oxide has been recessed in the drain in order to modify the electric field owing to dielectric permittivity change. The simulation results obtained by SILVACO showed the improvement of the short-channel effects in the terms of drain-induced barrier lowering, hot-carrier effects and threshold voltage fluctuation as compared to the conventional structure. | ||
| کلیدواژه‌ها | ||
| SOI-MOSFET؛ Short channel effect؛ Threshold voltage؛ Recessed oxide | ||
| مراجع | ||
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[10] International technology roadmap for semiconductor. Availablefromhttp://public.itrs.net. | ||
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آمار تعداد مشاهده مقاله: 172 تعداد دریافت فایل اصل مقاله: 198 |
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