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Performance analysis of FET-based Universal gates in multi-valued logic | ||
| Computational Sciences and Engineering | ||
| مقاله 7، دوره 5، شماره 1، تیر 2025، صفحه 115-137 اصل مقاله (1.45 M) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22124/cse.2025.31378.1117 | ||
| نویسندگان | ||
| Sina Nabi1؛ Abdalhossein Rezai* 2 | ||
| 1Department of Electric Engineering, University of Science and Culture, Tehran, Iran | ||
| 2University of Science and Culture | ||
| چکیده | ||
| This paper explores the advancements in Multi-Valued Logic (MVL) circuits, contrasting them with conventional binary logic systems. The paper discusses how MVL circuits improves the performance of logic circuits. The focus then shifts to emerging technologies for logic gate design based on carbon allotrope such as CNTFETs and (Graphene Nanoribbon Field Emission Transistors) GNRFETs. The paper analyzes the structure and operating principles of these transistors, providing a comparative analysis of their power consumption, switching speed, scalability, and manufacturing complexity. Specifically, the study investigates the performance of ternary and Quaternary Universal gates implemented using GNRFETs and CNTFETs. Moreover, in this article some other edge of knowledge technology like FinFETs circuits is explored to have a comprehensive view on the performance, advantage and disadvantage of MVL circuits. Results indicate that GNRFET-based designs demonstrate lower delay and significantly better energy efficiency compared to FinFETs and CNTFETs, despite some challenges with higher power consumption in certain GNRFET implementations. | ||
| کلیدواژهها | ||
| Multi-valued logic؛ CNTFET؛ GRNFET؛ FINFET؛ Universal gate | ||
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آمار تعداد مشاهده مقاله: 135 تعداد دریافت فایل اصل مقاله: 50 |
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