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Dehban rahimabad, Mohtaram, Heidari, Ali. (1404). A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C. فیزیولوژی و بیوتکنولوژی آبزیان, 5(1), 15-24. doi: 10.22124/cse.2025.31195.1112
Mohtaram Dehban rahimabad; Ali Heidari. "A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C". فیزیولوژی و بیوتکنولوژی آبزیان, 5, 1, 1404, 15-24. doi: 10.22124/cse.2025.31195.1112
Dehban rahimabad, Mohtaram, Heidari, Ali. (1404). 'A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C', فیزیولوژی و بیوتکنولوژی آبزیان, 5(1), pp. 15-24. doi: 10.22124/cse.2025.31195.1112
Dehban rahimabad, Mohtaram, Heidari, Ali. A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C. فیزیولوژی و بیوتکنولوژی آبزیان, 1404; 5(1): 15-24. doi: 10.22124/cse.2025.31195.1112

A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C

Computational Sciences and Engineering
مقاله 2، دوره 5، شماره 1، تیر 2025، صفحه 15-24    اصل مقاله (734.78 K)
نوع مقاله: Original Article
شناسه دیجیتال (DOI): 10.22124/cse.2025.31195.1112
نویسندگان
Mohtaram Dehban rahimabad* ؛ Ali Heidari
Department of Electrical Engineering, University of Guilan, Rasht, Iran
چکیده
This paper presents a low voltage BJT-based smart temperature sensor with duty cycle modulated output and inaccuracy of ±0.11 ◦C (3σ) and FOM resolution of about 1.4pJ. ◦C2 from −55◦C to 130◦C. This sensor can work with a supply voltage of 1.5V. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (VPTAT) and a complementary to absolute temperature voltage (VCTAT), which are then modulated to a duty-cycle output. Adding an integrator before the Schmitt trigger has increased the range of input changes of the Schmitt trigger. As a result, the hysteresis of the Schmitt trigger can be increased and it has better noise immunity. Implemented in a standard 0.18-µm CMOS process, the sensor has an active area of about 0.64mm2 and can work with 1.5V from -55◦C to 130◦C with an inaccuracy of ±0.11◦C (3σ). Power consumption is about 45uW.
کلیدواژه‌ها
CMOS temperature sensor؛ Duty-cycle؛ BJT؛ Low voltage؛ Resolution
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تعداد مشاهده مقاله: 155
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