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A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C | ||
| Computational Sciences and Engineering | ||
| مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 27 مرداد 1404 | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22124/cse.2025.31195.1112 | ||
| نویسندگان | ||
| Mohtaram Dehban rahimabad* ؛ Ali Heidari | ||
| Department of Electrical Engineering, University of Guilan, Rasht, Iran | ||
| چکیده | ||
| This paper presents a low voltage BJT-based smart temperature sensor with duty cycle modulated output and inaccuracy of ±0.11 ◦C (3σ) and FOM resolution of about 1.4pJ. ◦C2 from −55◦C to 130◦C. This sensor can work with a supply voltage of 1.5V. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (VPTAT) and a complementary to absolute temperature voltage (VCTAT), which are then modulated to a duty-cycle output. Adding an integrator before the Schmitt trigger has increased the range of input changes of the Schmitt trigger. As a result, the hysteresis of the Schmitt trigger can be increased and it has better noise immunity. Implemented in a standard 0.18-µm CMOS process, the sensor has an active area of about 0.64mm2 and can work with 1.5V from -55◦C to 130◦C with an inaccuracy of ±0.11◦C (3σ). Power consumption is about 45uW. | ||
| کلیدواژه‌ها | ||
| CMOS temperature sensor؛ duty-cycle؛ BJT؛ Low voltage؛ resolution | ||
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