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A Low Voltage BJT-Based Temperature Sensor with Duty Cycle Modulated Output with FOM Resolution of about 1.4pJ. ◦C2 and Inaccuracy of ±0.11 ◦C (3σ) from −55 ◦C to 130 ◦C | ||
| Computational Sciences and Engineering | ||
| مقاله 2، دوره 5، شماره 1، تیر 2025، صفحه 15-24 اصل مقاله (734.78 K) | ||
| نوع مقاله: Original Article | ||
| شناسه دیجیتال (DOI): 10.22124/cse.2025.31195.1112 | ||
| نویسندگان | ||
| Mohtaram Dehban rahimabad* ؛ Ali Heidari | ||
| Department of Electrical Engineering, University of Guilan, Rasht, Iran | ||
| چکیده | ||
| This paper presents a low voltage BJT-based smart temperature sensor with duty cycle modulated output and inaccuracy of ±0.11 ◦C (3σ) and FOM resolution of about 1.4pJ. ◦C2 from −55◦C to 130◦C. This sensor can work with a supply voltage of 1.5V. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (VPTAT) and a complementary to absolute temperature voltage (VCTAT), which are then modulated to a duty-cycle output. Adding an integrator before the Schmitt trigger has increased the range of input changes of the Schmitt trigger. As a result, the hysteresis of the Schmitt trigger can be increased and it has better noise immunity. Implemented in a standard 0.18-µm CMOS process, the sensor has an active area of about 0.64mm2 and can work with 1.5V from -55◦C to 130◦C with an inaccuracy of ±0.11◦C (3σ). Power consumption is about 45uW. | ||
| کلیدواژهها | ||
| CMOS temperature sensor؛ Duty-cycle؛ BJT؛ Low voltage؛ Resolution | ||
| مراجع | ||
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[1] Tang, Z., Pan, S., Grubor, M., & Makinwa, K. A. A. (2023). A sub-1 V capacitively biased BJT-based temperature sensor with an inaccuracy of ±0.15 °C (3σ) from −55 °C to 125 °C. IEEE Journal of Solid-State Circuits.
[2] Zhang, R., Fan, S., & Geng, L. (2018). A near-zero-power temperature sensor with ±0.24 °C inaccuracy using only standard CMOS transistors for IoT applications. IEEE International Symposium on Circuits and Systems (ISCAS), 1–4.
[3] Makinwa, K. (2020). Smart temperature sensor survey. Delft University of Technology. http://ei.ewi.tudelft.nl/docs/TSensorSurvey.xls
[4] Toth, N. G., Tang, Z., Someya, T., Pan, S., & Makinwa, K. A. A. (2023). A BJT-based temperature sensor with ±0.1 °C (3σ) inaccuracy from −55 °C to 125 °C and a 0.85 pJ·K² resolution FoM using continuous-time readout. IEEE International Solid-State Circuits Conference (ISSCC).
[5] Yousefzadeh, B., & Makinwa, K. A. A. (2017). 9.3 A BJT-based temperature sensor with a packaging-robust inaccuracy of ±0.3 °C (3σ) from −55 °C to +125 °C after heater-assisted voltage calibration. IEEE International Solid-State Circuits Conference (ISSCC), 162–163.
[6] Yousefzadeh, B., & Makinwa, K. A. A. (2020). A BJT-based temperature-to-digital converter with a ±0.25 °C 3σ-inaccuracy from −40 °C to +180 °C using heater-assisted voltage calibration. IEEE Journal of Solid-State Circuits, 55(2).
[7] Wang, G., Heidari, A., Makinwa, K. A. A., & Meijer, G. C. M. (2017). An accurate BJT-based CMOS temperature sensor with duty-cycle modulated output. IEEE Transactions on Industrial Electronics, 64(2), 1572–1580.
[8] Sandiri, R., Chimata, Y., Nalamasa, Y., & Arra, P. (2022). Design of noise immune subthreshold circuits using dynamic threshold Schmitt trigger logic. IEEE Region 10 Symposium (TENSYMP).
[9] Kumar, R. K., Jiang, H., & Makinwa, K. A. A. (2019). An energy-efficient BJT-based temperature-to-digital converter with ±0.13 °C (3σ) inaccuracy from −40 °C to 125 °C. IEEE Asian Solid-State Circuits Conference (A-SSCC), 107–108.
[10] Wang, B., & Law, M.-K. (2022). Subranging BJT-based CMOS temperature sensor with a ±0.45 °C inaccuracy (3σ) from −50 °C to 180 °C and a resolution-FoM of 7.2 pJ·K² at 150 °C. IEEE Journal of Solid-State Circuits, 57(12). | ||
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